公开(公告)号：US11488967B2

公开(公告)日：2022-11-01

申请号：US17211903

申请日：2021-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jörg D. Schmid ,  Nigel Chan

IPC: G11C11/417 ,  H01L27/11 ,  G11C11/412

Abstract: Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure. Various interconnects (including, but not limited to, silicide bridges and/or contact straps) provide the internal and electrical connections required for making the 8T SRAM cell operational and for incorporating the 8T SRAM cell into an array of such cells.

公开(公告)号：US20220310629A1

公开(公告)日：2022-09-29

申请号：US17211903

申请日：2021-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jörg D. Schmid ,  Nigel Chan

IPC: H01L27/11 ,  G11C11/412 ,  G11C11/417

Abstract: Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure. Various interconnects (including, but not limited to, silicide bridges and/or contact straps) provide the internal and electrical connections required for making the 8T SRAM cell operational and for incorporating the 8T SRAM cell into an array of such cells.