IC product comprising a novel insulating gate separation structure for transistor devices

    公开(公告)号:US11349013B2

    公开(公告)日:2022-05-31

    申请号:US16549478

    申请日:2019-08-23

    Abstract: One illustrative integrated circuit product disclosed herein includes a first final gate structure having a first end surface and a second final gate structure having a second end surface. In this embodiment, the integrated circuit product also includes an insulating gate separation structure positioned between the first and second final gate structures, wherein the first end surface contacts a first side surface of the insulating gate separation structure and the second end surface contacts a second side surface of the insulating gate separation structure. In this embodiment, the insulating gate separation structure has an inverted T-shaped cross-sectional configuration in at least one direction.

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