公开(公告)号：US20230395675A1

公开(公告)日：2023-12-07

申请号：US17834053

申请日：2022-06-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： James P. MAZZA ,  Jia ZENG ,  Xuelian ZHU ,  Mahbub RASHED ,  Neha NAYYAR ,  Collin A. TRANTER

IPC: H01L29/423

CPC classification number: H01L29/42376

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cross couple design for high density standard cells and methods of manufacture. The structure includes a first contact connected in a cross couple circuit to at least two gate structures, and a second contact connected to the first contact at a location which is devoid of any via connection.