公开(公告)号：US11967635B2

公开(公告)日：2024-04-23

申请号：US17533805

申请日：2021-11-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Randy L. Wolf

IPC: H01L29/735 ,  H01L29/06 ,  H01L29/161 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/6625

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region within a semiconductor substrate material; a shallow trench isolation structure extending into the semiconductor substrate material and bounding the extrinsic base region; an emitter region adjacent to the shallow trench isolation structure and on a side of the extrinsic base region; and a collector region adjacent to the shallow trench isolation structure and on an opposing side of the extrinsic base region.

公开(公告)号：US20230061717A1

公开(公告)日：2023-03-02

申请号：US17533805

申请日：2021-11-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Randy L. Wolf

IPC: H01L29/735 ,  H01L29/06 ,  H01L29/161 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region within a semiconductor substrate material; a shallow trench isolation structure extending into the semiconductor substrate material and bounding the extrinsic base region; an emitter region adjacent to the shallow trench isolation structure and on a side of the extrinsic base region; and a collector region adjacent to the shallow trench isolation structure and on an opposing side of the extrinsic base region.