公开(公告)号：US20200091281A1

公开(公告)日：2020-03-19

申请号：US16469809

申请日：2017-12-13

Applicant: GRIFFITH UNIVERSITY

Inventor： Sima DIMITRIJEV ,  Jisheng HAN

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308

Abstract: A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.