公开(公告)号：US10202704B2

公开(公告)日：2019-02-12

申请号：US13651981

申请日：2012-10-15

申请人： GTAT IP HOLDING LLC

发明人： William L. Luter ,  Verlin A. Lauher ,  Dick S. Williams ,  Howard P. Zinschlag ,  Neil Middendorf ,  David J. Dubiel

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B29/06

摘要： A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.