公开(公告)号：US20240332395A1

公开(公告)日：2024-10-03

申请号：US18579269

申请日：2022-01-29

Applicant: GUANGZHOU CANSEMI TECHNOLOGY INC.

Inventor： Yohtz Julian CHANG ,  Yunbo CHEN ,  Canyang HUANG ,  Zeyong CHEN

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/94

CPC classification number: H01L29/66181 ,  H01L27/0207 ,  H01L29/94

Abstract: A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first and second capacitors are formed in the respective redundant areas of the substrate, they will not unnecessarily occupy portions of a device area.