公开(公告)号：US20240145163A1

公开(公告)日：2024-05-02

申请号：US18382360

申请日：2023-10-20

申请人： GaNrich Semiconductor Corporation

发明人： Chiao FU ,  Yi-Chao LIN ,  Yao-Zhong LIU ,  Jia-Tay KUO

IPC分类号： H01F27/32 ,  H01F27/36

CPC分类号： H01F27/325 ,  H01F27/36 ,  H01F38/42

摘要： A transformer includes a bobbin and a plurality of coils wound on the bobbin. The plurality of coils includes a first primary coil; a second primary coil, located above the first primary coil and electrically connected to the first primary coil; a secondary coil, located between the first primary coil and the second primary; a first auxiliary coil, located above the second primary coil; and a second auxiliary coil, located on the first auxiliary coil and electrically connected to the first auxiliary coil. A turn number of the first auxiliary coil is greater than a turn number of the second auxi

公开(公告)号：US20240105827A1

公开(公告)日：2024-03-28

申请号：US18226181

申请日：2023-07-25

申请人： GaNrich Semiconductor Corporation

发明人： Chih-Hao CHEN ,  Yi-Ru SHEN ,  Yi-Chao LIN

IPC分类号： H01L29/778 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003

摘要： A semiconductor structure includes a first channel layer and a first barrier layer on the first channel layer. The first channel layer has a first potential well adjacent to the interface between the first channel layer and the first barrier layer. The semiconductor structure further includes a second channel layer on the first barrier layer, a second barrier layer on the second channel layer, and an intermediate layer between the second channel layer and the second barrier layer. The second channel layer has a second potential well adjacent to the interface between the second channel layer and the intermediate layer. The intermediate layer has a greater energy gap than either the first barrier layer or the second barrier layer. The energy gap of the first barrier layer is no less than the energy gap of the second barrier layer.