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公开(公告)号：US4554230A
公开(公告)日：1985-11-19
申请号：US619247
申请日：1984-06-11
CPC分类号： G03G5/0433 , G03G5/144
摘要： An electrophotographic imaging member is described comprising a substrate, a charge transport layer, a thin continuous interface layer consisting essentially of halogen doped selenium, and at least one selenium-tellurium alloy photoconductive charge generating layer. This electrophotographic imaging member may contain other layers such as a thin protective overcoating layer suitable for Carlson type imaging processes. An electrophotographic imaging process employing this electrophotographic imaging member is also described.
摘要翻译： 描述了一种电子照相成像构件，其包括基底，电荷传输层，基本上由卤素掺杂硒组成的薄连续界面层和至少一种硒 - 碲合金光电导电荷产生层。 该电子照相成像构件可以包含其它层，例如适用于卡尔森型成像工艺的薄保护性外涂层。 还描述了使用该电子照相成像构件的电子照相成像方法。
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2.发明授权
公开(公告)号：US6017485A
公开(公告)日：2000-01-25
申请号：US622994
申请日：1996-03-28
IPC分类号： C04B35/581 , H01L23/15 , C04B35/582
CPC分类号： H01L23/15 , C04B35/581 , H01L2924/0002
摘要： A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:(a) less than or equal to about 0.001; and(b) greater than or equal to about 0.01.A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.
摘要翻译： 受控介电损耗，具有大于理论值约95％的密度，大于约100W / mK的热导率和在约1KHz室温下测量的耗散因数的烧结氮化铝体，其选自：（a） 小于或等于约0.001; 和（b）大于或等于约0.01。 一种制造受控介质损耗的烧结氮化铝体的方法，包括在烧结温度下对氮化铝体进行热处理，包括在烧结温度下提供在氮化铝体中产生选定的氮空位的热处理气氛，以及冷却 氮化铝体以受控的速率和冷却气氛中的烧结温度有效地控制所选择的氮空位。
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