公开(公告)号：US20240297238A1

公开(公告)日：2024-09-05

申请号：US18177251

申请日：2023-03-02

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Abhijit Ghosh ,  Suk Hee Jang ,  Deepthi Kandasamy ,  Young Seon You ,  Yoke Leng Lim

IPC: H01L29/66 ,  H01L21/8234 ,  H01L23/528

CPC classification number: H01L29/6656 ,  H01L21/823468 ,  H01L23/5283

Abstract: A structure includes a first metal structure including a first upper metal feature having a first sidewall spacer thereabout, and a first lower metal feature under the first upper metal feature. The first lower metal feature includes a sidewall devoid of the first sidewall spacer. The structure also includes a second metal structure spaced from the first metal structure. The second metal structure includes a second upper metal feature having a second sidewall spacer thereabout, and a second lower metal feature under the first upper metal feature. The second lower metal feature includes a sidewall devoid of the second sidewall spacer. A dielectric is between the first metal structure and the second metal structure. The dielectric is devoid of any voids therein, and the opening it fills has a high aspect ratio. A related method is also provided.