HARD MASK LIFTOFF PROCESSES
    1.
    发明申请

    公开(公告)号:US20230114700A1

    公开(公告)日:2023-04-13

    申请号:US17962144

    申请日:2022-10-07

    Applicant: Google LLC

    Abstract: A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.

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