公开(公告)号：US08890157B2

公开(公告)日：2014-11-18

申请号：US13831992

申请日：2013-03-15

申请人： HannStar Display Corp.

发明人： Hsuan-Chen Liu ,  Hsien-Cheng Chang ,  Da-Ching Tang ,  Chien-Hao Wu ,  Ching-Chao Wang ,  Jung-Chen Lin

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/15 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78678 ,  H01L27/124

摘要： The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

摘要翻译： 本发明提供一种像素结构，包括基板，设置在基板上的薄膜晶体管，覆盖薄膜晶体管和基板的第一绝缘层，公共电极，连接电极，第二绝缘层和 像素电极。 薄膜晶体管包括漏电极。 第一绝缘层具有暴露漏电极的第一开口。 公共电极和连接电极设置在第一绝缘层上。 连接电极延伸到第一开口中以电连接到漏电极。 连接电极与公共电极电绝缘。 第二绝缘层覆盖第一绝缘层，公共电极，连接电极，并且具有暴露连接电极的第二开口。 像素电极设置在第二绝缘层上，并通过第二开口与连接电极电连接。

公开(公告)号：US20140197413A1

公开(公告)日：2014-07-17

申请号：US13831992

申请日：2013-03-15

申请人： HANNSTAR DISPLAY CORP.

发明人： Hsuan-Chen Liu ,  Hsien-Cheng Chang ,  Da-Ching Tang ,  Chien-Hao Wu ,  Ching-Chao Wang ,  Jung-Chen Lin

IPC分类号： H01L29/786

CPC分类号： H01L29/78678 ,  H01L27/124

摘要： The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

摘要翻译： 本发明提供一种像素结构，包括基板，设置在基板上的薄膜晶体管，覆盖薄膜晶体管和基板的第一绝缘层，公共电极，连接电极，第二绝缘层和 像素电极。 薄膜晶体管包括漏电极。 第一绝缘层具有暴露漏电极的第一开口。 公共电极和连接电极设置在第一绝缘层上。 连接电极延伸到第一开口中以电连接到漏电极。 连接电极与公共电极电绝缘。 第二绝缘层覆盖第一绝缘层，公共电极，连接电极，并且具有暴露连接电极的第二开口。 像素电极设置在第二绝缘层上，并通过第二开口与连接电极电连接。