专利检索 ap:("HANSOL CHEMICAL CO., LTD.") AND inv:"Ming-Sung PARK" 第 1 页

1.

发明申请
COBALT PRECURSOR, METHOD OF PREPARING SAME AND METHOD OF MANUFACTURING THIN FILM USING SAME 有权

公开(公告)号：US20210332074A1

公开(公告)日：2021-10-28

申请号：US16627243

申请日：2018-12-27

申请人： HANSOL CHEMICAL CO., LTD.

发明人： Jung-Woo PARK , Jang-Hyeon SEOK , Hyo-Suk KIM , Ming-Sung PARK

IPC分类号： C07F15/06 , C23C16/18 , C23C16/455

摘要： The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.