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1.发明授权公开(公告)号：US11245015B2
公开(公告)日：2022-02-08
申请号：US16937700
申请日：2020-07-24
发明人： Chuan Chen , Pengyu Chen , Tao Ma , Chengshao Yang
IPC分类号： H01L29/417 , H01L29/66 , H01L29/786 , H01L27/12
摘要： The present disclosure relates to the field of display technologies, and discloses a Thin Film Transistor, a method for preparing the same, an array substrate, a display panel and an apparatus. The TFT includes: a base substrate; an active layer; a source electrode; and a drain electrode; where the active layer, the source electrode, and the drain electrode are sequentially laminated on the base substrate; and a projection of the source electrode on the base substrate covers a projection of part of edges of the active layer on the base substrate.
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公开(公告)号：US11177334B2
公开(公告)日：2021-11-16
申请号：US16598675
申请日：2019-10-10
发明人： Liang Lin , Yunhai Wan , Zhixiang Zou , Chuan Chen , Wei He
IPC分类号： H01L27/32 , H01L27/12 , G02F1/135 , H01L29/786 , H01L21/77
摘要： A display substrate, display panel, and method of fabricating the display substrate. The display substrate includes: a first thin film transistor on a substrate; a second thin film transistor on the substrate and on the same side of the substrate as first thin film transistor; a light blocking structure between the substrate and an active region of first thin film transistor. The light blocking structure is configured to block at least a portion of light incident on the active region of first thin film transistor, such that a ratio of area of an illuminated portion of the active region of first thin film transistor to an area of the active region of first thin film transistor is less than a ratio of area of an illuminated portion of an active region of second thin film transistor to an area of the active region of second thin film transistor.
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