公开(公告)号：US10166778B2

公开(公告)日：2019-01-01

申请号：US15546823

申请日：2015-04-10

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Steve Rubart ,  Amy Gault ,  Sean P McClelland

IPC: B41J2/16 ,  B41J2/04 ,  B41J2/14

Abstract: An example of a method of forming a printhead includes forming first and second resistors over a first dielectric, forming a first portion of a second dielectric over the first and second resistors and a second portion of the second dielectric over an exposed inclined surface of the first dielectric in a region between the first and second resistors, forming a metal conductor over the first and second portions of the second dielectric, and removing an inclined segment of the metal conductor from an inclined surface of the second portion of the second dielectric to expose the inclined surface of the second portion of the second dielectric.

公开(公告)号：US20180022098A1

公开(公告)日：2018-01-25

申请号：US15546823

申请日：2015-04-10

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Steve Rubart ,  Amy Gault ,  Sean P McClelland

IPC: B41J2/16 ,  B41J2/14

CPC classification number: B41J2/1626 ,  B41J2/04 ,  B41J2/14129 ,  B41J2/16 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/164 ,  B41J2/1645

Abstract: An example of a method of forming a printhead includes forming first and second resistors over a first dielectric, forming a first portion of a second dielectric over the first and second resistors and a second portion of the second dielectric over an exposed inclined surface of the first dielectric in a region between the first and second resistors, forming a metal conductor over the first and second portions of the second dielectric, and removing an inclined segment of the metal conductor from an inclined surface of the second portion of the second dielectric to expose the inclined surface of the second portion of the second dielectric.

公开(公告)号：US10933634B2

公开(公告)日：2021-03-02

申请号：US16301132

申请日：2016-08-03

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Anthony M Fuller ,  Terry McMahon ,  Donald W Schulte ,  Amy Gault

IPC: B41J2/14 ,  B41J2/16 ,  G01N27/20

Abstract: A conductive wire disposed in a layer is described. An example apparatus includes a die including a silicon layer and a first layer coupled to the silicon layer. The example apparatus a conductive wire disposed in the first layer adjacent a perimeter of a location at which a fluid feed slot is to be formed in the silicon layer. The conductive wire has an electrical characteristic that corresponds to whether the fluid feed slot is defective.

公开(公告)号：US11279130B2

公开(公告)日：2022-03-22

申请号：US16958578

申请日：2019-04-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Michael W Cumbie ,  David J Benson ,  Randy Hoffman ,  Amy Gault

IPC: B41J2/14 ,  B41J2/16

Abstract: Examples include a fluidic device comprising a fluidic die, a support element, and a conductive member. The support element is coupled to the fluidic die, and the support element has a fluid channel formed therein. The fluid channel exposes at least a portion of a back surface of the fluidic die. The support element further includes a member opening passing therethrough. The conductive member is connected to the fluidic die, and the conductive member is a least partially disposed in the member opening such that a portion of the conductive member is exposed to the fluid channel of the support element.

公开(公告)号：US20190210366A1

公开(公告)日：2019-07-11

申请号：US16301132

申请日：2016-08-03

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Anthony M Fuller ,  Terry McMahon ,  Donald W Schulte ,  Amy Gault

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/14072 ,  B41J2/1601 ,  B41J2/162 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2002/14491 ,  G01N27/20

Abstract: A conductive wire disposed in a layer is described. An example apparatus includes a die including a silicon layer and a first layer coupled to the silicon layer. The example apparatus a conductive wire disposed in the first layer adjacent a perimeter of a location at which a fluid feed slot is to be formed in the silicon layer. The conductive wire has an electrical characteristic that corresponds to whether the fluid feed slot is defective.