公开(公告)号：US20140320566A1

公开(公告)日：2014-10-30

申请号：US13872314

申请日：2013-04-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kellie S. Jensen ,  Rio Rivas ,  Anthony M. Fuller

IPC: B41J2/01 ,  B41J29/00

CPC classification number: B41J2/01 ,  B41J2/14129 ,  B41J29/00 ,  B41J2202/13

Abstract: In one example implementation, a printhead die includes a SiO2 layer grown into a surface of a silicon substrate, a dielectric layer formed on the surface over an interior area of the substrate, a first termination ring surrounding the interior area and defined by an absence of the dielectric layer, a berm surrounding the first termination ring and defined by the presence of the dielectric layer, a damage detection conductor formed under the berm on the SiO2 layer, and a second termination ring surrounding the berm and defined by an absence of the dielectric layer.

Abstract translation: 在一个示例性实施例中，打印头芯片包括生长到硅衬底的表面中的SiO 2层，形成在衬底的内部区域上的表面上的电介质层，围绕内部区域并由不存在 电介质层，围绕第一端接环并由电介质层的存在限定的护套，形成在SiO2层上的护堤下方的损伤检测导体，以及围绕护堤并由不存在电介质限定的第二端接环 层。

公开(公告)号：US08870337B1

公开(公告)日：2014-10-28

申请号：US13872314

申请日：2013-04-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kellie S. Jensen ,  Rio Rivas ,  Anthony M. Fuller

IPC: B41J29/393 ,  B41J2/01 ,  B41J29/00

CPC classification number: B41J2/01 ,  B41J2/14129 ,  B41J29/00 ,  B41J2202/13

Abstract: In one example implementation, a printhead die includes a SiO2 layer grown into a surface of a silicon substrate, a dielectric layer formed on the surface over an interior area of the substrate, a first termination ring surrounding the interior area and defined by an absence of the dielectric layer, a berm surrounding the first termination ring and defined by the presence of the dielectric layer, a damage detection conductor formed under the berm on the SiO2 layer, and a second termination ring surrounding the berm and defined by an absence of the dielectric layer.

Abstract translation: 在一个示例性实施例中，打印头芯片包括生长到硅衬底的表面中的SiO 2层，形成在衬底的内部区域上的表面上的电介质层，围绕内部区域并由不存在 电介质层，围绕第一端接环并由电介质层的存在限定的护套，形成在SiO2层上的护堤下方的损伤检测导体，以及围绕护堤并由不存在电介质限定的第二端接环 层。