Substrate Etch
    2.
    发明申请
    Substrate Etch 审中-公开
    基板蚀刻

    公开(公告)号:US20160208404A1

    公开(公告)日:2016-07-21

    申请号:US14914068

    申请日:2013-08-30

    CPC classification number: C25F3/12 B81C1/00626 B81C2201/0133 C25F3/14 C25F7/00

    Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.

    Abstract translation: 一个实例提供了一种方法,包括将金属催化剂溅射到衬底上,将衬底暴露于与金属催化剂反应以在衬底中形成多个孔的溶液,以及蚀刻衬底以除去多个孔以形成凹部 在基材中。

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