FLASH MEMORY STORAGE SYSTEM
    1.
    发明申请
    FLASH MEMORY STORAGE SYSTEM 审中-公开
    闪存存储系统

    公开(公告)号:US20130103895A1

    公开(公告)日:2013-04-25

    申请号:US13716326

    申请日:2012-12-17

    Applicant: HITACHI, LTD

    CPC classification number: G06F12/0246 G11C16/349

    Abstract: A flash memory storage system has a plurality of flash memory devices comprising a plurality of flash memories, and a controller having an I/O processing control unit for accessing a flash memory device specified by a designated access destination in an I/O request received from an external device from among the plurality of flash memory devices. A parity group can be configured of flash memory devices having identical internal configuration.

    Abstract translation: 闪速存储器存储系统具有包括多个闪存的多个闪速存储器,以及具有I / O处理控制单元的控制器,该I / O处理控制单元用于访问由指定的访问目的地指定的闪存设备, 来自多个闪存设备中的外部设备。 可以配置具有相同内部配置的闪存设备的奇偶校验组。

Patent Agency Ranking