公开(公告)号：US20240379651A1

公开(公告)日：2024-11-14

申请号：US18780202

申请日：2024-07-22

Applicant: HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD.

Inventor： Peng GOU ,  Can ZHONG ,  Fengjie TANG ,  Xiran ZUO ,  Ming PAN ,  Liu YUAN ,  Tianyi ZHANG ,  Guidong JIN ,  Yanjun CHEN

IPC: H01L27/02 ,  H01L21/762 ,  H01L27/06

Abstract: An example manufacturing method includes performing first ion implantation into a first area of a substrate to form a buried layer. Second ion implantation into a second area of the substrate is performed to form a pre-dopant, where the second area is disposed around a periphery of the first area, and a thermal diffusion capability of ions in the pre-dopant is higher than a thermal diffusion capability of ions at the buried layer. An epitaxial layer is formed on a side, of the substrate, on which the buried layer and the pre-dopant are disposed. Third ion implantation into the epitaxial layer is performed, in correspondence to the second area, to form a deep well. Thermal annealing is performed to thermally diffuse ions at the buried layer, in the pre-dopant, and in the deep well.