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公开(公告)号:US20240379651A1
公开(公告)日:2024-11-14
申请号:US18780202
申请日:2024-07-22
Applicant: HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD.
Inventor: Peng GOU , Can ZHONG , Fengjie TANG , Xiran ZUO , Ming PAN , Liu YUAN , Tianyi ZHANG , Guidong JIN , Yanjun CHEN
IPC: H01L27/02 , H01L21/762 , H01L27/06
Abstract: An example manufacturing method includes performing first ion implantation into a first area of a substrate to form a buried layer. Second ion implantation into a second area of the substrate is performed to form a pre-dopant, where the second area is disposed around a periphery of the first area, and a thermal diffusion capability of ions in the pre-dopant is higher than a thermal diffusion capability of ions at the buried layer. An epitaxial layer is formed on a side, of the substrate, on which the buried layer and the pre-dopant are disposed. Third ion implantation into the epitaxial layer is performed, in correspondence to the second area, to form a deep well. Thermal annealing is performed to thermally diffuse ions at the buried layer, in the pre-dopant, and in the deep well.