公开(公告)号：US20230320115A1

公开(公告)日：2023-10-05

申请号：US17707465

申请日：2022-03-29

Applicant: HUAWEI TECHNOLOGIES CANADA CO., LTD. ,  University of Waterloo

Inventor： Dong Seob CHUNG ,  Hany Maher AZIZ

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/502 ,  H01L51/56 ,  H01L51/002

Abstract: This invention is related to a new treatment process employed during preparation of the ZnO ETL in a QDLED. The treatment involves exposing the ZnO layer to fluorine (F). In embodiments of this invention, the exposure of the ZnO layer to the F is performed using a fluorine plasma environment (e.g., using CF4, CHF3, C4F8 or SF6). Alternatively, the F exposure may be done by exposing the ZnO ETL to a suitable fluorine-containing substance such as fluorine gas or fluorinated solvents. The F plasma treatment of the ZnO improves both QDLED device EQE and EL stability.