PATTERNING MATERIAL, PATTERNING COMPOSITION, AND PATTERN FORMING METHOD

    公开(公告)号:US20240034930A1

    公开(公告)日:2024-02-01

    申请号:US18486684

    申请日:2023-10-13

    CPC classification number: C09K11/626 C09K11/02 C09K2211/10

    Abstract: This application relates to a patterning material, a patterning composition, and a pattern forming method. The patterning material in this application includes a metal-oxygen cluster framework, a radiation-sensitive organic ligand, and a second ligand. The radiation-sensitive organic ligand coordinates with a metal M through a coordination atom. The coordination atom is at least one of: an oxygen atom, a sulfur atom, a selenium atom, a nitrogen atom, or a phosphorus atom. The radiation-sensitive organic ligand is a monodentate ligand or a polydentate ligand with a denticity of two or more. The second ligand is an inorganic ion or a coordination group.

    COMPOUND, PATTERNING MATERIAL, SEMICONDUCTOR DEVICE, TERMINAL, AND PATTERNING METHOD

    公开(公告)号:US20240280898A1

    公开(公告)日:2024-08-22

    申请号:US18647024

    申请日:2024-04-26

    CPC classification number: G03F7/0042 C07F15/06 H01L21/0274

    Abstract: This application provides an organic mixed metal-oxygen cluster compound, and a chemical general formula thereof is as follows: (M1)a(M2)b(M3)cOg(L1)x(L2)y(L3)z, where M1 is selected from at least one of Ti, Zr, and Hf; M2 is selected from at least one of Bi, Te, Sn, Pt, Ag, and Au; M3 is selected from one of Fe, Ni, Co, and Cu; L1, L2, and L3 are respectively selected from organic ligands that directly coordinate with a metal and include one of O, S, Se, N, and P that serves as a ligating atom; a, b, g, x, y, and z are all natural numbers greater than or equal to 1; and c is a natural number greater than or equal to 0. This application further provides a patterning material including the organic mixed metal-oxygen cluster compound, a semiconductor device including the patterning material, a terminal, and a substrate surface patterning method.

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