公开(公告)号：US20240178295A1

公开(公告)日：2024-05-30

申请号：US18436209

申请日：2024-02-08

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Xin WANG ,  Dongliang ZHANG ,  Dongsheng WANG

IPC: H01L29/45 ,  H01L29/40 ,  H01L29/778

CPC classification number: H01L29/45 ,  H01L29/401 ,  H01L29/778

Abstract: This application relates to the field of electronic device technologies, and specifically, to a semiconductor device and a preparation method thereof. The semiconductor device includes: a substrate; an epitaxial structure disposed on the substrate; a passivation layer disposed on the epitaxial structure; and an ohmic contact electrode disposed in parallel with the passivation layer on the epitaxial structure, where the ohmic contact electrode includes a non-contact layer and a contact layer that are disposed in a laminated manner, the contact layer is in contact with the epitaxial structure, and composition elements of the contact layer include a germanium element and a tantalum element. The semiconductor device has a low ohmic contact resistance.

公开(公告)号：US20240170979A1

公开(公告)日：2024-05-23

申请号：US18423535

申请日：2024-01-26

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Dongliang ZHANG ,  Jianyun ZHU ,  Hang WANG ,  Mingwei JIANG

IPC: H02J7/00 ,  H01L27/06

CPC classification number: H02J7/00308 ,  H01L27/0629

Abstract: Embodiments of this application relate to the field of power supply system technologies, and provide a charging protection circuit, a driving method, a chip, a package structure, and an electronic device, to provide a charging protection circuit with stable bi-directional protection effect. The charging protection circuit includes a first switching transistor and a pull-up circuit. For example, the first switching transistor is a bi-directional HEMTs device, and includes a first drain electrode, a second drain electrode, a first gate electrode, and a substrate electrode. The first drain electrode is configured to receive a signal from the second drain electrode, the second drain electrode is configured to receive a signal from the first drain electrode, and the first gate electrode is configured to control the first switching transistor to be turned on or turned off.