HIGH-SYMMETRICAL SEMICONDUCTOR ARRANGEMENT
    1.
    发明公开

    公开(公告)号:US20240006330A1

    公开(公告)日:2024-01-04

    申请号:US18469355

    申请日:2023-09-18

    Abstract: The present disclosure relates to a semiconductor arrangement, comprising: a substrate; a first group of semiconductor elements forming a first switch; a second group of semiconductor elements forming a second switch. The substrate comprises: a first electrically conductive area; a second electrically conductive area; a third electrically conductive area; a fourth electrically conductive area. The semiconductor arrangement further comprises: a first electrical connection line; a second electrical connection line; and a third electrical connection line. The first electrical connection line, the second electrical connection line, the third electrical connection line and the fourth area of the substrate are dimensioned according to a symmetry criterion to enable a simultaneous current flow through the load paths of the semiconductor elements of the first group as well as a simultaneous current flow through the load paths of the semiconductor elements of the second group.

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