公开(公告)号：US20220320271A1

公开(公告)日：2022-10-06

申请号：US17708268

申请日：2022-03-30

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhaozheng HOU ,  Yunbin GAO ,  Yiyu WANG ,  Fei HU

IPC: H01L29/06 ,  H01L29/16 ,  H01L23/498 ,  H01L29/872 ,  H01L23/31

Abstract: This application provides a power semiconductor device, which includes: a semiconductor substrate, where the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, that is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, where the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate; and a passivation layer.