公开(公告)号：US20220344584A1

公开(公告)日：2022-10-27

申请号：US17762742

申请日：2020-10-21

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiaomin CHENG ,  Jinlong FENG ,  Ming XU ,  Meng XU ,  Xiangshui MIAO

IPC: H01L45/00 ,  H01L27/24

Abstract: A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers (7) and second phase-change layers (8) that are alternately stacked to form a periodic structure; during crystallization, the first phase-change layer (7) has a conventional positive density change, and the second phase-change layer (8) has an abnormal negative density change, therefore, the abnormal density reduction and volume increase of the second phase-change layer (8) during crystallization can be used to offset the volume reduction of the first phase-change layer (7) during crystallization.