公开(公告)号：US20220336743A1

公开(公告)日：2022-10-20

申请号：US17842800

申请日：2022-06-17

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Ruizhe ZHAO ,  Xiangshui MIAO

IPC: H01L45/00

Abstract: The disclosure belongs to the field of microelectronics, and specifically, relates to a method of inducing crystallization of a chalcogenide phase-change material and application thereof. To be specific, a dielectric material is brought into contact with an interface of the chalcogenide phase-change material. The dielectric material is in an octahedral configuration, and the dielectric material provides a crystal nucleus growth center for the crystallization of the chalcogenide phase-change material at the interface between the two, so as to induce the phase-change material to accelerate the crystallization. The method is further applied in a phase-change memory cell. Among all the dielectric material layers in contact with the chalcogenide phase-change material layer, the dielectric material structure of at least one side of the dielectric material layer is an octahedral configuration.