公开(公告)号：US07933145B2

公开(公告)日：2011-04-26

申请号：US12395814

申请日：2009-03-02

申请人： Hajime Yamagishi ,  Shoji Ichikawa ,  Takashi Kinoshita ,  Masanori Hosomi ,  Mitsuhara Shoji

发明人： Hajime Yamagishi ,  Shoji Ichikawa ,  Takashi Kinoshita ,  Masanori Hosomi ,  Mitsuhara Shoji

IPC分类号： G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A nonvolatile magnetic memory device includes a magnetoresistance effect element that includes: a layered structure having a recording layer; a first wiring electrically connected to a lower part of the layered structure; a second wiring electrically connected to an upper part of the layered structure; and an interlayer insulation layer surrounding the layered structure. The magnetoresistance effect element further includes a low Young modulus region having a Young modulus lower than that of a material forming the interlayer insulation layer. The recording layer has an easy magnetization axis, and a hard magnetization axis orthogonal to the easy magnetization axis. When the magnetostriction constant λ of a material forming the recording layer is a positive value or a negative value, the low Young modulus region is disposed in an extension region of the easy magnetization axis or in an extension region of the hard magnetization axis of the recording layer, respectively.

摘要翻译： 非易失性磁存储器件包括磁阻效应元件，其包括：具有记录层的层状结构; 电连接到层状结构的下部的第一布线; 电连接到层状结构的上部的第二布线; 以及围绕层状结构的层间绝缘层。 磁阻效应元件还包括具有低于形成层间绝缘层的材料的杨氏模量的低杨氏模量区域。 记录层具有容易的磁化轴和与易磁化轴正交的硬磁化轴。 当形成记录层的材料的磁致伸缩常数λ为正值或负值时，低杨氏模量区域设置在容易磁化轴的延伸区域或记录的硬磁化轴的延伸区域中 层。