专利检索 ap:("Hameed A. Naseem" OR "M. Shahidul Haque" OR "William D. Brown") AND inv:"M. Shahidul Haque" 第 1 页

1.

发明授权
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells 失效
标题翻译：掺杂硅，金属掺杂硅，制造太阳能电池的方法和太阳能电池的方法

公开(公告)号：US06339013B1

公开(公告)日：2002-01-15

申请号：US08855229

申请日：1997-05-13

申请人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

发明人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

IPC分类号： H01L2136

CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L31/0288 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521

摘要： A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.

摘要翻译： 用于形成金属掺杂硅层的低温工艺，其中在低温下将硅层沉积到衬底上，然后将金属掺杂层沉积在硅层上。然后将该结构在低温下退火以形成每cm 3硅具有大于约1×10 20个掺杂剂原子的金属掺杂半导体。

2.

发明授权
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells 失效
标题翻译：掺杂硅，金属掺杂硅的方法，制造太阳能电池的方法和太阳能电池

公开(公告)号：US06844248B2

公开(公告)日：2005-01-18

申请号：US10617698

申请日：2003-07-14

申请人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

发明人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

IPC分类号： H01L31/04 , H01L21/20 , H01L31/0288 , H01L31/18 , H01L31/20

CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L31/0288 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521

摘要： A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.

摘要翻译： 用于形成金属掺杂硅层的低温工艺，其中在低温下将硅层沉积到衬底上，然后将金属掺杂层沉积在硅层上。然后将该结构在低温下退火以形成每厘米3硅具有大于约1×10 20个掺杂剂原子的金属掺杂半导体。

3.

发明授权
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells 失效

公开(公告)号：US06613653B2

公开(公告)日：2003-09-02

申请号：US10029859

申请日：2001-12-31

申请人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

发明人： Hameed A. Naseem , M. Shahidul Haque , William D. Brown

IPC分类号： H01L2120

CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L31/0288 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521

摘要： A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.