公开(公告)号：US20050073869A1

公开(公告)日：2005-04-07

申请号：US10659428

申请日：2003-09-11

申请人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

发明人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

公开(公告)号：US20060146589A1

公开(公告)日：2006-07-06

申请号：US11027977

申请日：2005-01-04

申请人： Christer Karlsson ,  Goran Gustafsson ,  Mats Johansson ,  Per Sandstrom ,  Per-Erik Nordal ,  Hans Gudesen ,  Johan Carlsson

发明人： Christer Karlsson ,  Goran Gustafsson ,  Mats Johansson ,  Per Sandstrom ,  Per-Erik Nordal ,  Hans Gudesen ,  Johan Carlsson

IPC分类号： G11C11/22

CPC分类号： G11C29/50 ,  G11C11/22

摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

摘要翻译： 在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期 根据具有定义参数的电压脉冲的时间顺序进行擦除。 该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器 选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。