公开(公告)号：US20050118532A1

公开(公告)日：2005-06-02

申请号：US10904485

申请日：2004-11-12

申请人： Hans Mallmann ,  Thilo Mueller ,  Rainer Benczek

发明人： Hans Mallmann ,  Thilo Mueller ,  Rainer Benczek

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F9/7084

摘要： The invention relates to a method for lateral alignment of a substrate for photolithography, wherein the substrate's back side has a reference mark and the substrate front side is coated with a photoresist. The method includes the steps of: retrieving the reference mark on the substrate's back side, applying an alignment mark on the front side of the substrate by means of a first exposure of the photoresist with electromagnetic radiation to provide an undeveloped alignment mark, the undeveloped alignment mark being laterally positioned on the photoresist with respect to the reference mark on the substrate's back side, aligning the substrate by making use of the undeveloped alignment mark, applying a further manufacturing process on the front side of the aligned substrate.

摘要翻译： 本发明涉及一种用于光刻用基板的横向对准的方法，其中基板的背面具有参考标记，并且基板前侧涂覆有光致抗蚀剂。 该方法包括以下步骤：在衬底背面检索参考标记，通过用电磁辐射的光致抗蚀剂的第一次曝光来在衬底的正面上施加对准标记，以提供未发展的对准标记，未发展的对准 标记相对于衬底背面上的参考标记横向定位在光致抗蚀剂上，通过利用未显影的对准标记对准衬底，在对准衬底的正面上施加进一步的制造工艺。