Reflective projection lens for EUV-photolithography
    1.
    发明授权
    Reflective projection lens for EUV-photolithography 有权
    EUV光刻用反射投影透镜

    公开(公告)号:US07450301B2

    公开(公告)日:2008-11-11

    申请号:US11723831

    申请日:2007-03-22

    IPC分类号: G02B17/00 G03B27/72 G21K5/00

    摘要: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

    摘要翻译: 用于使用来自极紫外(EUV)光谱区域的电磁辐射将布置在物平面中的物体图案成像到图像平面的投影透镜在其物平面和图像平面之间具有限定投影透镜的光轴的成像反射镜,并且 有反光涂层。 这些反射镜中的至少一个具有梯度反射涂层,其具有相对于涂覆轴线旋转对称的膜厚度梯度,其中该涂覆轴相对于投影透镜的光轴被倾斜地布置。 提供至少一个中心,渐变,反射涂层允许设计投影透镜,允许高度均匀的场照度,并结合高透光率。