公开(公告)号：US06617221B1

公开(公告)日：2003-09-09

申请号：US10354044

申请日：2003-01-30

申请人： Hao-Chih Yuan ,  Nan-Huan Kuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Hao-Chih Yuan ,  Nan-Huan Kuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： H01L31331

CPC分类号： H01L28/40 ,  H01L27/0629 ,  H01L27/0805 ,  H01L29/94

摘要： A method for manufacturing capacitors is disclosed. The method is applicable to a capacitor whose upper electrode area is smaller than the lower electrode area. It is featured in that a material, such as a TiN hard mask, is inserted between the conventional electrode metal layer and photo resist layer. This enables one to perform the in-situ photo resist layer removal step after dry etching the upper electrode metal. Since the photo resist layer removal step uses oxygen plasma, the surface of the lower electrode polysilicon is formed with a protective oxide layer because the dielectric layer is etched during the process of dry etching the upper electrode metal. Using the disclosed method can solve the corrosion problem on the upper electrode metal and avoid the lower electrode polysilicon from being corroded by the wet etchant.

摘要翻译： 公开了制造电容器的方法。 该方法适用于上电极面积小于下电极面积的电容器。 其特征在于，将诸如TiN硬掩模的材料插入在常规电极金属层和光致抗蚀剂层之间。 这使得能够在干蚀刻上电极金属之后执行原位光刻胶层去除步骤。 由于光刻胶层去除步骤使用氧等离子体，因此在干蚀刻上电极金属的过程中蚀刻电介质层，所以下电极多晶硅的表面形成有保护氧化物层。 使用所公开的方法可以解决上电极金属的腐蚀问题，并避免下电极多晶硅被湿蚀刻剂腐蚀。