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    METHOD AND SYSTEM FOR PROXY ENTITY REPRESENTATION IN AUDIO/VIDEO NETWORKS
    1.
    发明申请
    METHOD AND SYSTEM FOR PROXY ENTITY REPRESENTATION IN AUDIO/VIDEO NETWORKS 审中-公开
    音视频网络中代理实体代表的方法和系统

    公开(公告)号：US20120314713A1

    公开(公告)日：2012-12-13

    申请号：US13491269

    申请日：2012-06-07

    申请人： Harkirat SINGH ,  Ilju NA ,  Jae Min LEE ,  Chiu NGO

    发明人： Harkirat SINGH ,  Ilju NA ,  Jae Min LEE ,  Chiu NGO

    IPC分类号： H04L12/66

    CPC分类号： H04L65/1069 ,  H04L65/607 ,  H04N21/43615

    摘要： Communication in an AV network includes a Talker device initiating communication with a Listener device via a proxy device for data streaming. The proxy device participates in one or more of: content discovery, connection establishment, AV selection and AV streaming between the Talker device initiating communication with a Listener device.

    摘要翻译： AV网络中的通信包括通过用于数据流传输的代理设备发起与侦听器设备的通信的通话器设备。 代理设备参与以下一个或多个：在发起与侦听器设备的通信的Talker设备之间的内容发现，连接建立，AV选择和AV流。

    SEMICONDUCTOR DEVICE HAVING DEEP CONTACT STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE HAVING DEEP CONTACT STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有深度接触结构的半导体器件及其制造方法

    公开(公告)号：US20100295188A1

    公开(公告)日：2010-11-25

    申请号：US12635935

    申请日：2009-12-11

    申请人： Ky Hyun HAN ,  Jae Min LEE

    发明人： Ky Hyun HAN ,  Jae Min LEE

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L23/5226 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device having a deep contact structure having an improved contact resistance is presented. The semiconductor device includes a semiconductor substrate, a first interlayer insulating layer, a contact plug, a second interlayer insulating layer, and a copper contact pad. The contact plug is formed in the first interlayer insulating layer and has a bulbous shaped upper side wall and an inwardly tapered lower side wall that extends downward towards the semiconductor substrate. The second interlayer insulating layer is formed over first interlayer insulating layer such that the second interlayer insulating layer includes a hole that exposes a top surface and a peripheral portion of the bulbous shaped upper side wall of the contact plug. The copper contact pad is buried within the hole so that the exposed parts of the bulbous shaped upper side wall of the contact plug protrude into the copper contact pad.

    摘要翻译： 提出了一种具有改善的接触电阻的深接触结构的半导体器件。 半导体器件包括半导体衬底，第一层间绝缘层，接触插塞，第二层间绝缘层和铜接触焊盘。 接触插塞形成在第一层间绝缘层中，并具有朝向半导体衬底向下延伸的球形上侧壁和向内锥形的下侧壁。 第二层间绝缘层形成在第一层间绝缘层上，使得第二层间绝缘层包括露出接触插塞的球形上侧壁的顶表面和周边部分的孔。 铜接触垫被埋在孔内，使得接触插塞的球形上侧壁的暴露部分突出到铜接触垫中。