公开(公告)号：US10177310B2

公开(公告)日：2019-01-08

申请号：US15324691

申请日：2014-07-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  James Elmer Abbott, Jr. ,  Zhiyong Li

IPC: H01L45/00 ,  H01L27/24 ,  C22C5/04 ,  C22C27/02 ,  C22C27/04 ,  C22C30/00

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.