公开(公告)号：US20200028323A1

公开(公告)日：2020-01-23

申请号：US16489495

申请日：2017-02-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond C. Beausoleil

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/34 ,  G02B6/122 ,  G02B6/12

Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.