摘要:
A method of producing a magnetic recording medium produces a medium having a magnetic recording layer disposed above a nonmagnetic intermediate layer, The nonmagnetic intermediate layer is formed by a sputtering using a target made of an oxide material. Oxygen gas or carbon dioxide gas is supplied during the sputtering in order to suppress a state where an oxygen supply becomes insufficient due to separation of oxygen atoms from the oxide material at a time of plasma generation.
摘要:
One aspect of the embodiments utilizes, according to an aspect of the invention, a method of manufacturing a magnetic recording medium, which includes an intermediate layer and a granular magnetic layer as a recording layer sequentially formed on a non-magnetic substrate, includes the steps of forming the intermediate layer and forming the granular magnetic layer. The granular magnetic layer includes a plurality of magnetic particles made of a Co alloy and an oxide magnetically separating the plurality of magnetic particles by a sputtering method using a target. The target includes a Co alloy, one or more first oxides selected from a group of oxides of Si, Ti, Ta, Cr, W, and Nb, and a second oxide composed of a Co oxide.
摘要:
A perpendicular magnetic recording medium that is excellent in terms of electromagnetic conversion characteristics and can achieve the demand for the recording density growth, and a magnetic recording and reproducing apparatus provided with the perpendicular magnetic recording medium are provided. The perpendicular magnetic recording medium has at least a backing layer, an underlayer, an intermediate layer, and a perpendicular magnetic recording layer sequentially laminated on a non-magnetic substrate, in which the backing layer includes at least a soft magnetic film having an amorphous structure; the underlayer includes a first underlayer and a second underlayer laminated from the non-magnetic substrate side; the first underlayer is an fcc-structured alloy layer including an fcc-structured element and a bcc-structured element, the second underlayer includes a NiW alloy; and the intermediate layer includes Ru or a Ru alloy.