公开(公告)号：US20080237801A1

公开(公告)日：2008-10-02

申请号：US12076053

申请日：2008-03-13

Applicant: Hideki Kisara ,  Masao Okihara

Inventor： Hideki Kisara ,  Masao Okihara

IPC: H01L27/00

CPC classification number: H01L27/13 ,  H01L27/0629 ,  H01L27/1203 ,  H01L28/20

Abstract: A semiconductor device includes a resistor element formed in a semiconductor layer of an SOI substrate (Silicon On Insulator). The semiconductor device includes a low concentration impurity area formed in the semiconductor layer as the resistor element; a high concentration impurity area formed in the semiconductor layer as a resistor element wiring portion; and a silicide layer selectively formed on the high concentration impurity area. The high concentration impurity area includes one end portion contacting with an end portion of the low concentration impurity area, and the other end portion contacting with an impurity area of another element.

Abstract translation: 半导体器件包括形成在SOI衬底（绝缘体上硅）的半导体层中的电阻元件。 半导体器件包括在半导体层中形成的低浓度杂质区域作为电阻元件; 形成在半导体层中的高浓度杂质区域作为电阻元件布线部分; 以及选择性地形成在高浓度杂质区上的硅化物层。 高浓度杂质区域包括与低浓度杂质区域的端部接触的一端部，另一端部与另一元件的杂质区域接触。