公开(公告)号：US06174364B1

公开(公告)日：2001-01-16

申请号：US09232561

申请日：1999-01-15

申请人： Hideki Yamanaka ,  Masahiro Sakurada ,  Shinichi Horie

发明人： Hideki Yamanaka ,  Masahiro Sakurada ,  Shinichi Horie

IPC分类号： C30B3306

CPC分类号： C30B29/06 ,  C30B15/00

摘要： A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is caused a transition from a region where excess vacancies are present, but grown-in defect is not present to a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present, and a transition pulling rate Pi from a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present to a region where an agglomerate of interstitial silicon atoms is present. There are provided a method for producing a silicon monocrystal having no defect through the whole area of the wafer and having high quality wherein a deviation of amount of precipitated oxygen is small by pulling a crystal with controlling a pulling rate P as a general and interoperable valuable, and the silicon monocrystal produced thereby.

摘要翻译： 根据Czochralski方法制造单晶硅的方法，其特征在于生长晶体，其控制在存在过量空位的区域的转变的过渡牵引速率Pc之间的牵引速率，但是不存在生长缺陷 到存在过量的间隙硅原子但不存在其附聚物的区域，并且存在来自存在过量间隙硅原子的区域的过渡牵引速率P 1，但是其聚集体不存在于 存在间隙硅原子。 提供了通过晶片的整个区域制造没有缺陷的硅单晶的方法，并且具有高质量，其中通过以控制拉伸速率P拉动晶体作为一般和可互操作的有价值的，沉淀氧的量的偏差小 ，由此生成硅单晶。