公开(公告)号：US12068290B2

公开(公告)日：2024-08-20

申请号：US17611305

申请日：2020-04-02

申请人： Hitachi Energy Ltd

发明人： Arne Schroeder ,  Slavo Kicin ,  Fabian Mohn ,  Juergen Schuderer

IPC分类号： H01L25/07 ,  H01L23/00 ,  H01L23/373 ,  H01L23/538

CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/32 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/19107

摘要： A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.