公开(公告)号：US20250104981A1

公开(公告)日：2025-03-27

申请号：US18279818

申请日：2022-06-08

Applicant: Hitachi High-Tech Corporation

Inventor： Kosa HIROTA ,  Masahiro SUMIYA ,  Ryu EZAKI ,  Anil PANDEY ,  Yuki MORIYA

IPC: H01J37/32

Abstract: Provided is a plasma processing method for implementing a state in which product manufacturing can be started in a short period of time by reducing particles generated after maintenance of a plasma processing apparatus. The plasma processing method for plasma-processing a sample includes: a sweeping step of sweeping out a particle after maintenance of a processing chamber in which the sample is plasma-processed; a deposition step of depositing a deposition film in the processing chamber after the sweeping step; a first removing step of removing the deposition film after the deposition step; a second removing step of removing fluorine in the processing chamber after the first removing step; and a plasma processing step of plasma-processing the sample placed on a sample stage. The sweeping step, the deposition step, the first removing step, and the second removing step are repeated two or more times before the plasma processing step.