公开(公告)号：US20200035445A1

公开(公告)日：2020-01-30

申请号：US16286303

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Hao XU ,  Hiroshige UCHIDA ,  Shigeru Nakamoto ,  Kousuke FUKUCHI ,  Satomi INOUE

IPC: H01J37/22 ,  H01J37/32

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.