专利检索 ap:("Hong Soo JEON" OR "Ji-Sang LEE" OR "Oh Suk KWON") AND inv:"Hong Soo JEON" 第 1 页

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发明申请
MEMORY DEVICE, MEMORY SYSTEM AND PROGRAMMING METHOD 审中-公开
标题翻译：存储器件，存储器系统和编程方法

公开(公告)号：US20100232228A1

公开(公告)日：2010-09-16

申请号：US12715692

申请日：2010-03-02

申请人： Hong Soo JEON , Ji-Sang LEE , Oh Suk KWON

发明人： Hong Soo JEON , Ji-Sang LEE , Oh Suk KWON

IPC分类号： G11C16/04 , G11C16/06

CPC分类号： G11C16/3454

摘要： A method of programming a memory device includes comparing a first verify voltage and a distribution voltage of at least one memory cell, and if a result of the comparison is a pass, adjusting the distribution voltage until the distribution voltage is higher than a second verify voltage while comparing the distribution voltage and the second verify voltage.

摘要翻译： 一种对存储器件进行编程的方法包括比较第一验证电压和至少一个存储器单元的分配电压，并且如果比较结果是通过，则调整分配电压直到分配电压高于第二验证电压同时比较分配电压和第二验证电压。