公开(公告)号：US20120104482A1

公开(公告)日：2012-05-03

申请号：US13241387

申请日：2011-09-23

申请人： Hong-Suk KIM ,  Jun Kyu AHN ,  Jae Young AHN ,  Ki Hyun HWANG ,  Yong Hyun KWON

发明人： Hong-Suk KIM ,  Jun Kyu AHN ,  Jae Young AHN ,  Ki Hyun HWANG ,  Yong Hyun KWON

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L29/40114

摘要： A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.

摘要翻译： 半导体器件包括限定半导体衬底的多个有源区的器件隔离层，浮置栅极和控制栅电极，其中电极的最下部分由金属层构成。 控制栅电极跨越有源区。 浮置栅极设置在控制栅电极和有源区之间。 浮置栅极的顶部设置在高于器件隔离层的顶部的高度的水平面上，使得在相邻的浮动栅极之间限定间隙。 间隙的区域被控制栅电极的金属层填充。