公开(公告)号：US20250070070A1

公开(公告)日：2025-02-27

申请号：US18945986

申请日：2024-11-13

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Mirko BERNARDONI ,  Lasse Petteri PALM ,  Gilberto CURATOLA

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L25/18

Abstract: The present disclosure is related to the field of semiconductor devices and packaging, and to heat transfer in a semiconductor package. The present disclosure provides a semiconductor package and a method for fabricating the semiconductor packet. The semiconductor package comprises a semiconductor device, a heat sink, and a plurality of vias. The plurality of vias is arranged between the semiconductor device and the heat sink to transfer heat from the semiconductor device to the heat sink. The plurality of vias further forms a non-uniform distribution of vias over the device face.

公开(公告)号：US20250022840A1

公开(公告)日：2025-01-16

申请号：US18890986

申请日：2024-09-20

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Lasse Petteri PALM ,  Andreas Munding

IPC: H01L23/00 ,  H01L25/07 ,  H05K1/18 ,  H05K3/46

Abstract: A semiconductor power entity including a first laminate layer; a second laminate layer; an isolation layer arranged between the first laminate layer and the second laminate layer; a first metal layer arranged at a first laminate upper main face of the first laminate layer and a second metal layer arranged at a first laminate lower main face of the first laminate layer; a third metal layer arranged at a second laminate upper main face of the second laminate layer and a fourth metal layer arranged at a second laminate lower main face of the second laminate layer; and a connection metal layer embedded in the isolation layer between the first laminate layer and the second laminate layer, the connection metal layer forming an electrical connection with the second metal layer and the third metal layer.