公开(公告)号：US12112110B2

公开(公告)日：2024-10-08

申请号：US17890354

申请日：2022-08-18

申请人： Huazhong University of Science and Technology ,  Shenzhen Union Semiconductor Co., LTD

发明人： Zhiqiang Wang ,  Yayong Yang ,  Yuxin Ge ,  Guoqing Xin ,  Xiaojie Shi

IPC分类号： G06F30/367 ,  G06F30/31 ,  G06F30/398

CPC分类号： G06F30/367 ,  G06F30/31 ,  G06F30/398

摘要： The present invention belongs to the technical field of simulation of power semiconductor modules, and discloses a multi-physics co-simulation method of a power semiconductor module. The multi-physics co-simulation method of the power semiconductor module comprises: adopting professional circuit simulation software PSpice supporting a spice model to be imported into a device, and by designing a specific collaborative analysis method and performing secondary development of a software data exchange interface, i.e. constructing a coupling interface of co-simulation, performing electricity-heat-force co-simulation of two types of software PSpice and COMSOL by adopting an indirect coupling manner. The simulation time is greatly shortened, and the simulation efficiency is improved.

公开(公告)号：US11976984B1

公开(公告)日：2024-05-07

申请号：US18182339

申请日：2023-03-12

申请人： Huazhong University of Science and Technology

发明人： Zhiqiang Wang ,  Yayong Yang ,  Guoqing Xin ,  Xiaojie Shi ,  Yong Kang

IPC分类号： G01K7/22 ,  G01K15/00

CPC分类号： G01K7/22 ,  G01K15/005

摘要： The present disclosure belongs to the technical field of power electronic converters, and discloses a method and a system for predicting a junction temperature of a power semiconductor module in the full life cycle and a terminal. The method includes the steps: arranging an NTC thermistor network to monitor the temperature of each area inside the power module when the power module works; obtaining data for training the neural network by utilizing finite element simulation or experiments, and building a neural network model among the temperature of the NTC resistor network, a water flow rate, an aging factor and the junction temperature of the chip under working conditions. The present disclosure improves the junction temperature prediction accuracy of areas with relatively large errors comprehensively and realizes the high-precision junction temperature prediction under all working conditions.