公开(公告)号：US20070171335A1

公开(公告)日：2007-07-26

申请号：US11621140

申请日：2007-01-09

申请人： Hyun Son ,  Kweon Hong ,  Sang Choi

发明人： Hyun Son ,  Kweon Hong ,  Sang Choi

IPC分类号： G02F1/1335

CPC分类号： G02F1/133528 ,  G02B5/3016 ,  G02F2201/50 ,  G02F2202/22 ,  G02F2202/28

摘要： A polarizing plate formed with an antistatic film preventing the formation of stains caused by the generation of static electricity and a liquid crystal display panel comprising the same. The polarizing plate includes a polarizer polarizing incident light. a first and a second protection film formed on opposing surfaces of the polarizer, respectively, and protecting the polarizer, a first antistatic film formed on the first protection film and an adhesive layer formed on the first antistatic film.

摘要翻译： 形成有防止由静电产生引起的污点形成的抗静电膜的偏振板和包含该静电膜的液晶显示面板。 偏振片包括偏振器偏振入射光。 分别形成在偏振器的相对表面上并保护偏振器的第一和第二保护膜，形成在第一保护膜上的第一抗静电膜和形成在第一抗静电膜上的粘合剂层。

公开(公告)号：US06468874B1

公开(公告)日：2002-10-22

申请号：US09722357

申请日：2000-11-28

申请人： Yong Sik Yu ,  Kweon Hong

发明人： Yong Sik Yu ,  Kweon Hong

IPC分类号： H01L2120

CPC分类号： H01L28/60 ,  H01L28/55

摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a BST dielectric film, the present invention forms a contact layer and a diffusion prevention film within a first contact hole for plug in a plug shape, forms a second contact hole using an oxide film, deposits an underlying electrode material and then removes the oxide film to form an underlying electrode. Therefore, the present invention has outstanding advantages of increasing the effective surface area of an underlying electrode since a process of etching the underlying electrode which could not be etched easily can be omitted, and preventing diffusion of oxygen upon formation of a dielectric thin film since a direct contact of a metal/oxygen diffusion prevention film and the dielectric film can be avoided. As a result, the present invention can improve an electrical characteristic of a capacitor.

摘要翻译： 公开了一种在半导体器件中制造电容器的方法。 为了解决在使用BST电介质膜的具有堆叠结构的电容器中发生难以确保有效表面积和电容器插头与下层电极之间的未对准的问题，本发明形成接触层和 在插塞形状的第一接触孔内形成扩散防止膜，使用氧化膜形成第二接触孔，沉积下面的电极材料，然后除去氧化物膜以形成下面的电极。 因此，本发明具有提高底层电极的有效表面积的突出优点，因为可以省略蚀刻难以蚀刻的下面的电极的工艺，并且可以防止形成电介质薄膜时的氧扩散，因为 可以避免金属/氧扩散防止膜与电介质膜的直接接触。 结果，本发明可以改善电容器的电特性。