Abstract:
Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to etching the oxide layer. The illustrated method includes forming a gate on a semiconductor substrate, forming a spacer on a sidewall of the gate, forming an oxide layer over the substrate, forming a mask on the oxide layer to cover a non-salicide area, implanting impurity ions into a portion of the oxide layer which is not covered by the mask, removing the portion of the oxide layer which is implanted with impurity ions, performing salicidation on the substrate, and removing the mask.
Abstract:
The present invention relates to a container for centrifugation. The container for centrifugation includes: a main body (100) including a first chamber (110) in which a material to be centrifuged is received, a second chamber (120) in which a suspended material centrifuged from the material in the first chamber (110) is decanted from the first chamber (110) and received and which is positioned on one side of the first chamber (110), and a coupling part (130) formed to surround the first chamber (110) and the outside of the upper end of the second chamber (120); and a cover (200) which covers an upper portion of the main body (100) and forms a fluid communication path (P) of the decanted suspended material between the first chamber (110) and the second chamber (120).