公开(公告)号：US20060229045A1

公开(公告)日：2006-10-12

申请号：US11345237

申请日：2006-02-02

申请人： Hyung Choi ,  Jiwei Jiao ,  Yuelin Wang ,  Xianglong Xing

发明人： Hyung Choi ,  Jiwei Jiao ,  Yuelin Wang ,  Xianglong Xing

IPC分类号： H04B1/06

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01P1/127

摘要： A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.

公开(公告)号：US07477884B2

公开(公告)日：2009-01-13

申请号：US11345237

申请日：2006-02-02

申请人： Hyung Choi ,  Jiwel Jiao ,  Yuelin Wang ,  Xianglong Xing

发明人： Hyung Choi ,  Jiwel Jiao ,  Yuelin Wang ,  Xianglong Xing

IPC分类号： H04B1/06

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01P1/127

摘要： A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.

摘要翻译： 三态RF MEMS开关包括：形成在第一衬底中的第一阱; 第一输入信号线和第一输出信号线，其在第一阱中形成第一间隙; 在第二基板中形成第二阱和第三阱之间的边界的柱条; 第二输入信号线和第二输出信号线，以及分别在第二阱和第三阱中形成第二间隙和第三间隙的第三输入信号线和第三输出信号线; 以及膜，其设置在所述第一基板和所述第二基板之间，使得所述膜跨越所述第一，第二和第三间隙，所述膜包括第一导电焊盘，第二导电焊盘和第三导电焊盘， 和第三个差距。

公开(公告)号：US20140026934A1

公开(公告)日：2014-01-30

申请号：US14110144

申请日：2012-04-05

申请人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

发明人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

IPC分类号： H01L35/32 ,  H01L35/34

CPC分类号： H01L35/32 ,  H01L27/16 ,  H01L35/34

摘要： A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

摘要翻译： 一种三维热电能量收集器及其制造方法。 蚀刻低电阻率硅以在沟槽之间形成多个沟槽和硅柱，并且在沟槽的表面上形成绝缘层，并且通过使用薄膜沉积技术制造热电柱，使得热电 柱和相邻硅柱形成热电偶对; 然后通过诸如蚀刻和沉积的工艺制造金属布线，随后使基板变薄并且支撑基板的接合，从而完成三维热电能量收集器的制造。 通过一个薄膜沉积工艺制造热电偶对结构简化了制造工艺。 使用硅的热电偶对确保了较高的塞贝克系数。 使用具有柱结构的垂直热电偶对提高了热电收集器的机械稳定性。

公开(公告)号：US20140021576A1

公开(公告)日：2014-01-23

申请号：US14110141

申请日：2012-04-06

申请人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

发明人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

IPC分类号： H01L35/10 ,  H01L35/34

CPC分类号： H01L35/10 ,  H01L27/16 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

摘要： A miniature thermoelectric energy harvester and a fabrication method thereof Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

摘要翻译： 一种微型热电收割机及其制造方法在低电阻率硅基板上制造环形沟槽以限定硅热电柱，在环形槽上制造绝缘层，将热电材料填充在环形槽中以形成环形热电 列，然后制造金属布线，钝化层和支撑基板，从而完成制造过程。 使用硅基材料的硅热电柱简化了制造工艺。 热电偶结构的制造是一个薄膜沉积工艺，这简化了工艺。 使用硅作为热电偶的组成部分具有较高的塞贝克系数。 使用垂直热电偶可提高稳定性。 由于热电偶结构通过晶片级接合结合到上支撑衬底和下支撑衬底，所以制造效率提高。

公开(公告)号：US20150044128A1

公开(公告)日：2015-02-12

申请号：US14362076

申请日：2012-03-23

申请人： Chunlei Wu ,  Xianjian Duan ,  Chengkun Long ,  Yuelin Wang

发明人： Chunlei Wu ,  Xianjian Duan ,  Chengkun Long ,  Yuelin Wang

IPC分类号： F27D17/00 ,  F27D1/00 ,  B01J19/00

CPC分类号： F27D17/001 ,  B01D46/0068 ,  B01D53/40 ,  B01D53/685 ,  B01D2257/2045 ,  B01J19/00 ,  C01B33/12 ,  C01B33/18 ,  F23J15/02 ,  F23J2217/101 ,  F27D1/0033

摘要： A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.

摘要翻译： 公开了一种使用该装置的脱酸装置和脱酸方法。 脱酸装置包括脱酸炉，其分别在上部，中部和下部设置炉上部，炉中部和炉下部，其中气固混合物入口（1），排气出口 3）和过滤空气口（2）设置在炉上部，在炉下部设置有产品出口（13），脱酸装置的上部安装有过滤器（5），气体 固体混合物入口（1），排气出口（2）和过滤空气口（3）连接，过滤空气口（2）通过三通连接装置与气体脉冲装置和真空装置连接 ，排气口（3）与大气连接或与真空装置连接。

公开(公告)号：US09190596B2

公开(公告)日：2015-11-17

申请号：US14110144

申请日：2012-04-05

申请人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

发明人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

IPC分类号： H01L35/32 ,  H01L27/16 ,  H01L35/34

CPC分类号： H01L35/32 ,  H01L27/16 ,  H01L35/34

摘要： A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

摘要翻译： 一种三维热电能量收集器及其制造方法。 蚀刻低电阻率硅以在沟槽之间形成多个沟槽和硅柱，并且在沟槽的表面上形成绝缘层，并且通过使用薄膜沉积技术制造热电柱，使得热电 柱和相邻硅柱形成热电偶对; 然后通过诸如蚀刻和沉积的工艺制造金属布线，随后使基板变薄并且支撑基板的接合，从而完成三维热电能量收集器的制造。 通过一个薄膜沉积工艺制造热电偶对结构简化了制造工艺。 使用硅的热电偶对确保了较高的塞贝克系数。 使用具有柱结构的垂直热电偶对提高了热电收集器的机械稳定性。

公开(公告)号：US08853814B2

公开(公告)日：2014-10-07

申请号：US14110141

申请日：2012-04-06

申请人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

发明人： Dehui Xu ,  Bin Xiong ,  Yuelin Wang

IPC分类号： H01L35/10 ,  H01L35/32 ,  H01L35/22 ,  H01L35/34

CPC分类号： H01L35/10 ,  H01L27/16 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34

摘要： A miniature thermoelectric energy harvester and a fabrication method thereof. Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

摘要翻译： 一种微型热电收获机及其制造方法。 在低电阻率硅衬底上制造环形槽以限定硅热电柱，在环形槽上制造绝缘层，将热电材料填充在环形槽中以形成环形热电柱，然后将金属布线，钝化层和 制造支撑基板，从而完成制造工艺。 使用硅基材料的硅热电柱简化了制造工艺。 热电偶结构的制造是一个薄膜沉积工艺，这简化了工艺。 使用硅作为热电偶的组成部分具有较高的塞贝克系数。 使用垂直热电偶可提高稳定性。 由于热电偶结构通过晶片级接合结合到上支撑衬底和下支撑衬底，所以制造效率提高。

公开(公告)号：US20070259471A1

公开(公告)日：2007-11-08

申请号：US11811572

申请日：2007-06-11

申请人： Xinxin Li ,  Heng Yang ,  Yuelin Wang ,  Songlin Feng

发明人： Xinxin Li ,  Heng Yang ,  Yuelin Wang ,  Songlin Feng

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L21/00

CPC分类号： B81C1/00547

摘要： A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped region(s) 25 are formed in the upper surface of an n-type substrate 20. A trench 22 is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion 21 of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements 27 and electrode elements 29 for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements 27, 29 on the trench side-walls and the previously P-typedoped portions 25 on the wafer surface. The trench 22 intersects with insulating elements 28, so that insulating elements 28 mutually insulate adjacent electrical elements 27, 29. P-n junctions between the electrical elements 27, 29 and the substrate 20 insulate the electrical elements 27, 29 from the substrate.

摘要翻译： 公开了一种在沟槽侧壁上形成压阻感测元件和静电致动元件的方法。 P型掺杂区25形成在n型衬底20的上表面中。 沟槽22形成在衬底中（例如通过DRIE工艺）与掺杂区交叉，并且限定衬底的相对于衬底的其余部分在衬底的平面中可移动的部分21。 然后，P型掺杂剂扩散到沟槽侧壁中，形成用于静电致动的压阻元件27和电极元件29。 由于两个掺杂区域的交点，在沟槽侧壁上的电气元件27,29和晶片表面上的先前的P型化部分25之间存在良好的电路径。 沟槽22与绝缘元件28相交，使得绝缘元件28相互绝缘相邻的电气元件27,29。 电气元件27,29和基板20之间的P-n结将电气元件27,29与基板绝缘。

公开(公告)号：US09273905B2

公开(公告)日：2016-03-01

申请号：US14362076

申请日：2012-03-23

申请人： Chunlei Wu ,  Xianjian Duan ,  Chengkun Long ,  Yuelin Wang

发明人： Chunlei Wu ,  Xianjian Duan ,  Chengkun Long ,  Yuelin Wang

IPC分类号： B01D53/40 ,  B01D53/68 ,  B01D46/00 ,  C01B33/12 ,  C01B33/18 ,  B01J19/00 ,  F27D17/00 ,  F23J15/02 ,  F27D1/00

CPC分类号： F27D17/001 ,  B01D46/0068 ,  B01D53/40 ,  B01D53/685 ,  B01D2257/2045 ,  B01J19/00 ,  C01B33/12 ,  C01B33/18 ,  F23J15/02 ,  F23J2217/101 ,  F27D1/0033

摘要： A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.

摘要翻译： 公开了一种使用该装置的脱酸装置和脱酸方法。 脱酸装置包括脱酸炉，其分别在上部，中部和下部设置炉上部，炉中部和炉下部，其中气固混合物入口（1），排气出口 3）和过滤空气口（2）设置在炉上部，在炉下部设置有产品出口（13），脱酸装置的上部安装有过滤器（5），气体 固体混合物入口（1），排气出口（2）和过滤空气口（3）连接，过滤空气口（2）通过三通连接装置与气体脉冲装置和真空装置连接 ，排气口（3）与大气连接或与真空装置连接。

公开(公告)号：US07550358B2

公开(公告)日：2009-06-23

申请号：US11811572

申请日：2007-06-11

申请人： Xinxin Li ,  Heng Yang ,  Yuelin Wang ,  Songlin Feng

发明人： Xinxin Li ,  Heng Yang ,  Yuelin Wang ,  Songlin Feng

IPC分类号： H01L21/331

CPC分类号： B81C1/00547

摘要： A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.

摘要翻译： 公开了一种在沟槽侧壁上形成压阻感测元件和静电致动元件的方法。 在n型衬底的上表面上形成P型掺杂区域。 在衬底中形成沟槽（例如通过DRIE工艺）与掺杂区域交叉并且限定衬底的相对于衬底的其余部分在衬底的平面中可移动的部分。 然后，P型掺杂剂扩散到沟槽侧壁中，形成用于静电驱动的压阻元件和电极元件。 由于两个掺杂区域的交点，沟槽侧壁上的电气元件与晶片表面上先前的P型掺杂部分之间存在良好的电气路径。 沟槽与绝缘元件相交，使得绝缘元件相互绝缘相邻的电气元件。 电气元件和衬底之间的P-n结将电气元件与衬底绝缘。