Abstract:
A beam of charged particles is stepped from one predetermined position to another to form a desired pattern on a semiconductor wafer to which the beam is applied in accordance with a predetermined pattern. Instead of the beam being stepped to each of the predetermined positions, there is a dynamic correction for the deviation of the actual position from its predetermined position so that the beam is applied to the deviated position rather than the predetermined position whereby the pattern is written within the boundaries of the writing field as determined by the location of four registration marks, which are in four separate positions or points in the field. Through location of each of the four registration marks, the writing field is precisely defined. Writing fields may be interconnected by the sharing of registration marks enabling the construction of chips which are larger than a single writing field.