公开(公告)号：US3892650A

公开(公告)日：1975-07-01

申请号：US31940972

申请日：1972-12-29

Applicant: IBM

Inventor： CUOMO JEROME J ,  MOLZEN JR WALTER W

IPC: C23C14/34 ,  C23C14/56 ,  C23C15/00

CPC classification number: C23C14/345 ,  C23C14/34 ,  C23C14/564 ,  Y10S148/006 ,  Y10S148/06 ,  Y10S148/158

Abstract: A process for purifying the diffuse sputtering region of a sputtering system by providing therein a readily disproportionated active vapor species which decomposes therein to form an active getterer of undesirable reactive gases, such as desorbed and source sputtering gases present in the system. In one example, silane mixed with argon decomposes in the diffuse sputtering region to form films of silicon and compounds thereof throughout the sputtering chamber, which silicon acts to chemically getter the reactive gases present. Using an ultra pure vanadium target, films of vanadium are produced having bulk superconducting and resistivity properties.

Abstract translation: 通过在其中提供易于歧化的活性蒸汽物质来纯化溅射系统的扩散溅射区域的方法，其在其中分解以形成不期望的反应性气体的活性吸附剂，例如系统中存在的解吸和源溅射气体。 在一个实例中，与氩气混合的硅烷在扩散溅射区域分解，以在整个溅射室中形成硅膜及其化合物，硅用于化学吸收存在的反应气体。 使用超纯钒靶，制造具有体超导和电阻率性质的钒膜。